FCP099N65S3
Manufacturer:
On Semiconductor
Mfr.Part #:
FCP099N65S3
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 227 W 650 V Continuous Drain Current (ID):30 A 61 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Power Dissipation | 227 W |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 30 A |
| Element Configuration | Single |
| Gate Charge | 61 nC |
| Drain to Source Resistance | 79 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 2.5 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 271
Distributors
pcbx
pcbxUnit Price$2.56564
Ext.Price$2.56564
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.56564 | $2.56564 |
| 10 | $1.73978 | $17.39780 |
| 25 | $1.72715 | $43.17875 |
| 50 | $1.71462 | $85.73100 |
| 100 | $1.70217 | $170.21700 |
| 300 | $1.68111 | $504.33300 |
| 500 | $1.66031 | $830.15500 |
| 1000 | $1.63976 | $1639.76000 |